Key Processes & Material Advantages

1. Aluminum Nitride (AlN) Ceramic Substrate

• High Thermal Conductivity: With a thermal conductivity of 170–200 W/m·K, far superior to alumina ceramics, it efficiently dissipates heat generated by high-power components such as semiconductor lasers and RF devices, preventing thermal drift and performance degradation.
• Thermal Expansion Matching: Its coefficient of thermal expansion (CTE) closely matches that of silicon-based chips, significantly reducing thermal stress between the chip and the substrate, minimizing the risk of delamination and cracking, and enhancing long-term device reliability.
• High Insulation & Low Loss: It exhibits excellent electrical insulation and extremely low dielectric loss at high frequencies, meeting the signal transmission requirements of RF, microwave, and optical communication devices.

2. Core Process Highlights

• Electroplated Via Filling: 0.1mm micro-vias are fully filled with electroplated copper, eliminating residual air bubbles in the holes, improving via conduction stability, and enhancing structural reliability to meet the demands of high-current and high-reliability applications.
• Copper Step Technology: By implementing differential copper thickness/step designs, it creates copper layer height differences across different regions of the same substrate. This accommodates the current-carrying and heat dissipation requirements of different power zones on the device, while providing precise step structures for packaging and wire bonding.